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| 型号 | SP8M5TB |
| 厂商 | Rohm Semiconductor |
| 描述 | MOSFET N+P 30V 6A 8-SOIC |
| SP8M5TB PDF |  |
| 代理商 | SP8M5TB |
| 产品目录绘图 | RRS, RSS Series 8-SOP, 8-SOIC |
| 特色产品 | ECOMOS? Series MOSFETs |
| 标准包装 | 1 |
| FET 型 | N 和 P 沟道 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 30V |
| 电流 - 连续漏极(Id) @ 25° C | 6A，7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 30 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大） | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs | 7.2nC @ 5V |
| 输入电容 (Ciss) @ Vds | 520pF @ 10V |
| 功率 - 最大 | 2W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装 | 8-SOICN |
| 包装 | 标准包装 |
| 产品目录页面 | 1639 (CN2011-ZH PDF) |
| 其它名称 | SP8M5TBDKR |
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